DMP45H4D9HJ3

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):450 V
• Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:547 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):104W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-251
• Package / Case:TO-251-3, IPak, Short Leads