STP20N60M2-EP

Technical Details

• Series:MDmesh™ M2-EP
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):110W (Tc)
• Operating Temperature:-
• Mounting Type:Through Hole
• Supplier Device Package:TO-220
• Package / Case:TO-220-3