TK6Q60W,S1VQ
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 6.2A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK6Q60W,S1VQ Datasheet
-
ECAD Model
- Share
In Stock: 120
Can ship immediately
Pricing:
- 1$1.6088
- 75$1.6088
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Technical Details
- Series:DTMOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:820mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:3.7V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 300 V
- FET Feature:Super Junction
- Power Dissipation (Max):60W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Stub Leads, IPak
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