In Stock: 194

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  • 1$1.428

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Technical Details

  • Series:HEXFET®, StrongIRFET™
  • Package:Tape & Reel (TR)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 150µA

 

  • Gate Charge (Qg) (Max) @ Vgs:4.5 V @ 137 nC
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:25 V @ 8320 pF
  • FET Feature:-
  • Power Dissipation (Max):231W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK (TO-263)
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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