IPB024N10N5ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 180A TO263-7
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB024N10N5ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 110
Can ship immediately
Pricing:
- 1$3.10678
- 1,000$3.10678
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id:3.8V @ 183µA
- Gate Charge (Qg) (Max) @ Vgs:138 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:10200 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-7
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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