FDV302P
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDV302P Datasheet
-
ECAD Model
- Share
In Stock: 168
Can ship immediately
Pricing:
- 1$0.05
- 3,000$0.05
- 6,000$0.0437
- 15,000$0.03741
- 30,000$0.03531
- 75,000$0.0332
- 150,000$0.02901
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:10Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:0.31 nC @ 4.5 V
- Vgs (Max):-8V
- Input Capacitance (Ciss) (Max) @ Vds:11 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):350mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23
- Package / Case:TO-236-3, SC-59, SOT-23-3
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