MIC94030YM4TR

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):16 V
• Current - Continuous Drain (Id) @ 25°C:1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:450mOhm @ 100mA, 10V
• Vgs(th) (Max) @ Id:1.4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):568mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-143
• Package / Case:TO-253-4, TO-253AA