IPP90R800C3XKSA1

Rochester Electronics
In Stock: 104

Can ship immediately

Pricing:
  • 1$0.97
  • 10$0.88087
  • 100$0.71798
  • 500$0.56982
  • 1,000$0.48091

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Technical Details

  • Series:CoolMOS™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 460µA

 

  • Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1.1 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):104W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3-1
  • Package / Case:TO-220-3

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