IRLS3813PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 160A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLS3813PBF Datasheet
-
ECAD Model
- Share
In Stock: 149
Can ship immediately
Pricing:
- 1$1.01
- 1,000$1.01
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:1.95mOhm @ 148A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:83 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:8.02 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):195W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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