IRLS3036PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 195A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLS3036PBF Datasheet
-
ECAD Model
- Share
In Stock: 124
Can ship immediately
Pricing:
- 1$2
- 250$2
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 165A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:140 nC @ 4.5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:11.21 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):380W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
16A, 600V, 0.199OHM, N-CHANNEL M
- 1: $2.01000
MOSFET N-CH 150V 25A TO204AE
- 1: $2.01000
21A, 600V, 0.165OHM, N-CHANNEL M
- 1: $2.06000
POWER FIELD-EFFECT TRANSISTOR
- 1: $2.08000
POWER FIELD-EFFECT TRANSISTOR, N
- 1: $2.59000
MOSFET N-CH 600V 22A TO247
- 1: $2.76000