IRLD120
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 1.3A 4DIP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLD120 Datasheet
-
ECAD Model
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In Stock: 137
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 5V
- Rds On (Max) @ Id, Vgs:270mOhm @ 780mA, 5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.3W (Ta)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:4-DIP, Hexdip, HVMDIP
- Package / Case:4-DIP (0.300", 7.62mm)
