IRF7663
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 8.2A MICRO8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF7663 Datasheet
-
ECAD Model
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In Stock: 116
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:20mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:45 nC @ 5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:2520 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1.8W (Ta)
- Operating Temperature:-
- Mounting Type:Surface Mount
- Supplier Device Package:Micro8™
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
