SI4435DYTR
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 8A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI4435DYTR Datasheet
-
ECAD Model
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In Stock: 155
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Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
