IRF5803

Technical Details

• Series:HEXFET®
• Package:Tube
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:112mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2W (Ta)
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:Micro6™(TSOP-6)
• Package / Case:SOT-23-6 Thin, TSOT-23-6