IRF1902PBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 4.2A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF1902PBF Datasheet
-
ECAD Model
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In Stock: 169
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:85mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
