FQI8P10TU
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 100V 8A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQI8P10TU Datasheet
-
ECAD Model
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Technical Details
- Series:QFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.75W (Ta), 65W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK (TO-262)
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
