IRF6629TR1PBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 29A DIRECTFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF6629TR1PBF Datasheet
-
ECAD Model
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Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:29A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.1mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:51 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4260 pF @ 13 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 100W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DIRECTFET™ MX
- Package / Case:DirectFET™ Isometric MX
