SPB10N10L G
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 10.3A TO263-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SPB10N10L G Datasheet
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ECAD Model
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Technical Details
- Series:SIPMOS®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Discontinued at Digi-Key
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:154mOhm @ 8.1A, 10V
- Vgs(th) (Max) @ Id:2V @ 21µA
- Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:444 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):50W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
