STB25NM60N-1
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 21A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STB25NM60N-1 Datasheet
-
ECAD Model
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In Stock: 171
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Technical Details
- Series:MDmesh™ II
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):160W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
