IRF6641TR1PBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 4.6A DIRECTFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF6641TR1PBF Datasheet
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Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:4.6A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:59.9mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.8W (Ta), 89W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DIRECTFET™ MZ
- Package / Case:DirectFET™ Isometric MZ
