2SK3565(Q,M)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 900V 5A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SK3565(Q,M) Datasheet
-
ECAD Model
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In Stock: 179
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Technical Details
- Series:π-MOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):900 V
- Current - Continuous Drain (Id) @ 25°C:5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.5Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):45W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
