STW55NM60ND

Technical Details

• Series:FDmesh™ II
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:60mOhm @ 25.5A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):350W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-3
• Package / Case:TO-247-3