SIA417DJ-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 8V 12A PPAK SC70-6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIA417DJ-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 167
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):8 V
- Current - Continuous Drain (Id) @ 25°C:12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:23mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
- Vgs (Max):±5V
- Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 4 V
- FET Feature:-
- Power Dissipation (Max):3.5W (Ta), 19W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® SC-70-6 Single
- Package / Case:PowerPAK® SC-70-6
