TK55D10J1(Q)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 55A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK55D10J1(Q) Datasheet
-
ECAD Model
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In Stock: 189
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:55A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:10.5mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):140W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220(W)
- Package / Case:TO-220-3
