SI1065X-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 12V 1.18A SC89-6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI1065X-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 188
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:1.18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:156mOhm @ 1.18A, 4.5V
- Vgs(th) (Max) @ Id:950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):236mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SC-89-6
- Package / Case:SOT-563, SOT-666
