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Technical Details

  • Series:U-MOSIII-H
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:180mOhm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):840mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PS-8 (2.9x2.4)
  • Package / Case:8-SMD, Flat Lead

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