IPB80N06S2L09ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 80A TO263-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB80N06S2L09ATMA1 Datasheet
-
ECAD Model
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In Stock: 174
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)
- Part Status:Discontinued at Digi-Key
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:8.2mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id:2V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2620 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):190W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
