IPD082N10N3GBTMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 80A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD082N10N3GBTMA1 Datasheet
-
ECAD Model
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In Stock: 115
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:8.2mOhm @ 73A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
