SSM6J53FE(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 1.8A ES6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SSM6J53FE(TE85L,F) Datasheet
-
ECAD Model
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In Stock: 167
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 2.5V
- Rds On (Max) @ Id, Vgs:136mOhm @ 1A, 2.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:10.6 nC @ 4 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:568 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:ES6 (1.6x1.6)
- Package / Case:SOT-563, SOT-666
