IPP80N06S405AKSA1

IR (Infineon Technologies)
In Stock: 116

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:OptiMOS™
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5.7mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id:4V @ 60µA

 

  • Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):107W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3-1
  • Package / Case:TO-220-3

Related Products


IPP90N06S4L04AKSA1

MOSFET N-CH 60V 90A TO220-3

IPP90N06S4L04AKSA1 Datasheet

Call for price


IPS110N12N3GBKMA1

MOSFET N-CH 120V 75A TO251-3

IPS110N12N3GBKMA1 Datasheet

Call for price


IPS118N10N G

MOSFET N-CH 100V 75A TO251-3

IPS118N10N G Datasheet

Call for price


IPB021N06N3GATMA1

MOSFET N-CH 60V 120A D2PAK

IPB021N06N3GATMA1 Datasheet

Call for price


IPB034N06N3GATMA1

MOSFET N-CH 60V 100A TO263-7

IPB034N06N3GATMA1 Datasheet

Call for price


IPB60R600CPATMA1

MOSFET N-CH 600V 6.1A D2PAK

IPB60R600CPATMA1 Datasheet

Call for price


IPD320N20N3GBTMA1

MOSFET N-CH 200V 34A TO252-3

IPD320N20N3GBTMA1 Datasheet

Call for price


IPD600N25N3GBTMA1

MOSFET N-CH 250V 25A TO252-3

IPD600N25N3GBTMA1 Datasheet

Call for price


SI7860ADP-T1-E3

MOSFET N-CH 30V 11A PPAK SO-8

SI7860ADP-T1-E3 Datasheet

Call for price


SI2303BDS-T1

MOSFET P-CH 30V 1.49A SOT23-3

SI2303BDS-T1 Datasheet

Call for price


Top