IRLB3036GPBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 195A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLB3036GPBF Datasheet
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ECAD Model
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In Stock: 200
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 165A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:140 nC @ 4.5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:11210 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):380W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
