NTD4960N-1G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 8.9A/55A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTD4960N-1G Datasheet
-
ECAD Model
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:8.9A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):1.07W (Ta), 35.71W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
