NTBV45N06LT4G

ON Semiconductor
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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:28mOhm @ 22.5A, 5V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.4W (Ta), 125W (Tj)
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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