In Stock: 113

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:-
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc) (165°C)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:415mOhm @ 4A
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 35 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 225°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-276
  • Package / Case:TO-276AA

Related Products


2N7637-GA

TRANS SJT 650V 7A TO257

2N7637-GA Datasheet

Call for price


2N7638-GA

TRANS SJT 650V 8A TO276

2N7638-GA Datasheet

Call for price


2N7639-GA

TRANS SJT 650V 15A TO257

2N7639-GA Datasheet

Call for price


2N7640-GA

TRANS SJT 650V 16A TO276

2N7640-GA Datasheet

Call for price


SISA18DN-T1-GE3

MOSFET N-CH 30V 38.3A PPAK1212-8

SISA18DN-T1-GE3 Datasheet

Call for price


SIR642DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

SIR642DP-T1-GE3 Datasheet

Call for price


STL70N10F3

MOSFET N CH 100V 82A PWRFLAT 5X6

STL70N10F3 Datasheet

Call for price


BSZ023N04LSATMA1

MOSFET N-CH 40V 22A/40A TSDSON

BSZ023N04LSATMA1 Datasheet

Call for price


IPA50R190CE

MOSFET N-CH 500V 18.5A TO220-FP

IPA50R190CE Datasheet

Call for price


IPA50R650CE

MOSFET N-CH 500V 6.1A TO220-FP

IPA50R650CE Datasheet

Call for price


Top