SI1011X-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:480mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
• Rds On (Max) @ Id, Vgs:640mOhm @ 400mA, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
• Vgs (Max):±5V
• Input Capacitance (Ciss) (Max) @ Vds:62 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):190mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-89-3
• Package / Case:SC-89, SOT-490