GA10JT12-247
GeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRANS SJT 1200V 10A TO247AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet GA10JT12-247 Datasheet
-
ECAD Model
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In Stock: 115
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:-
- Technology:SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:140mOhm @ 10A
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):-
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):170W (Tc)
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247AB
- Package / Case:TO-247-3
