RJK1003DPN-E0#T2
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 50A TO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RJK1003DPN-E0#T2 Datasheet
-
ECAD Model
- Share
In Stock: 129
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
