RJK6018DPK-00#T0
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 30A TO3P
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RJK6018DPK-00#T0 Datasheet
-
ECAD Model
- Share
In Stock: 105
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:235mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):200W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-3P
- Package / Case:TO-3P-3, SC-65-3
