RJK6032DPH-E0#T2
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 3A TO251
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RJK6032DPH-E0#T2 Datasheet
-
ECAD Model
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In Stock: 135
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:285 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):40.3W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-251
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
