STS3P6F6

Technical Details

• Series:DeepGATE™, STripFET™ VI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:3A (Tj)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:160mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 48 V
• FET Feature:-
• Power Dissipation (Max):2.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SO
• Package / Case:8-SOIC (0.154", 3.90mm Width)