APT94N65B2C6

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:35mOhm @ 35.2A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 3.5mA

• Gate Charge (Qg) (Max) @ Vgs:320 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:8140 pF @ 25 V
• FET Feature:Super Junction
• Power Dissipation (Max):833W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:T-MAX™ [B2]
• Package / Case:TO-247-3 Variant