SI5411EDU-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:8.2mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id:900mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:105 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):3.1W (Ta), 31W (Tc)
• Operating Temperature:-50°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® ChipFet Single
• Package / Case:PowerPAK® ChipFET™ Single