RQJ0303PGDQA#H6
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 3.3A 3MPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RQJ0303PGDQA#H6 Datasheet
-
ECAD Model
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In Stock: 198
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:68mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):+10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds:625 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):800mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:3-MPAK
- Package / Case:TO-236-3, SC-59, SOT-23-3
