H7N1002LS-E

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:75A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:10mOhm @ 37.5A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:9700 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):100W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-LDPAK
• Package / Case:SC-83