SUM110N04-2M1P-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:29A (Ta), 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.1mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:360 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:18800 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):3.13W (Ta), 312W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263 (D2Pak)
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB