TPCC8104,L1Q

Technical Details

• Series:U-MOSVI
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:8.8mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
• Vgs (Max):+20V, -25V
• Input Capacitance (Ciss) (Max) @ Vds:2260 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):700mW (Ta), 27W (Tc)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Package / Case:8-PowerVDFN