PHT2NQ10T,135
NXP Semiconductors
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 2.5A SOT223
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PHT2NQ10T,135 Datasheet
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In Stock: 200
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Technical Details
- Series:TrenchMOS™
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:430mOhm @ 1.75A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:160 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):6.25W (Tc)
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-223
- Package / Case:TO-261-4, TO-261AA
