1N8030-GA
GeneSiC Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionDIODE SCHOTTKY 650V 750MA TO257
- CategoryDiodes - Rectifiers - Single
- Datasheet 1N8030-GA Datasheet
-
ECAD Model
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In Stock: 127
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- Diode Type:Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max):650 V
- Current - Average Rectified (Io):750mA
- Voltage - Forward (Vf) (Max) @ If:1.39 V @ 750 mA
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):0 ns
- Current - Reverse Leakage @ Vr:5 µA @ 650 V
- Capacitance @ Vr, F:76pF @ 1V, 1MHz
- Mounting Type:Through Hole
- Package / Case:TO-257-3
- Supplier Device Package:TO-257
- Operating Temperature - Junction:-55°C ~ 250°C
