MT3S113TU,LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionRF TRANS NPN 5.3V 11.2GHZ UFM
- CategoryTransistors - Bipolar (BJT) - RF
- Datasheet MT3S113TU,LF Datasheet
-
ECAD Model
- Share
In Stock: 5,922
Can ship immediately
Pricing:
- 1$0.64
- 3,000$0.2562
- 6,000$0.24339
- 15,000$0.23333
- 30,000$0.22692
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- Transistor Type:NPN
- Voltage - Collector Emitter Breakdown (Max):5.3V
- Frequency - Transition:11.2GHz
- Noise Figure (dB Typ @ f):1.45dB @ 1GHz
- Gain:12.5dB
- Power - Max:900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
- Current - Collector (Ic) (Max):100mA
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-SMD, Flat Lead
- Supplier Device Package:UFM
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