BSO615CGHUMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPFET, 3.1A I(D), 60V, 0.11OHM, 2
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSO615CGHUMA1 Datasheet
-
ECAD Model
- Share
In Stock: 6,398
Can ship immediately
Pricing:
- 1$0.27
- 2,500$0.27
- 5,000$0.25649
- 12,500$0.24686
Quote It
Technical Details
- Series:SIPMOS®
- Package:Bulk
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:3.1A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs:110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:2V @ 20µA, 2V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs:22.5nC, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:380pF, 460pF @ 25V
- Power - Max:2W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:PG-DSO-8
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